Abstract

Leveraging its fully‑in‑house IDM platform, DoGain continues to break through technical barriers in high‑end laser chips and addresses the long‑standing industry pain point of reconciling high output power with low operating voltage. The company proudly launches its new‑generation series of 915 nm and 975 nm high‑power single‑emitter laser chips. While retaining excellent beam quality and high reliability, the products achieve simultaneous improvements in output power and electro‑optical conversion efficiency. Among them, the 45 W and 55 W chips deliver a rated electro‑optical conversion efficiency exceeding 69%, approaching the theoretical efficiency limit. They serve as more powerful and efficient core light sources for high‑end scenarios including intelligent manufacturing, industrial processing and scientific research.

Application Background

915 nm and 975 nm semiconductor laser chips are ideal pump sources for high‑power fiber lasers. Their output power and electro‑optical conversion efficiency directly determine the overall power, energy consumption and operating cost of fiber laser systems. As industrial processing, precision manufacturing, scientific research and other applications impose growing requirements on laser power and system stability, conventional chips commonly suffer from severe efficiency roll‑off, difficult thermal management and degraded reliability under high‑power operating conditions. Accordingly, maintaining high efficiency, low heat dissipation and long service life at elevated power levels has become a key R&D priority for laser chip technology.

Development Achievements

Targeting efficiency decay and reliability challenges of 915 nm / 975 nm high‑power single‑emitter laser chips under high‑power operation, DoGain Core has carried out systematic technical research. By innovating quantum‑well band‑structure and strain‑modulation design, optimizing epitaxial‑layer interface quality and carrier confinement capability, combined with low‑damage wafer processing and advanced facet‑passivation technology, coordinated improvement in power and efficiency has been realized:

‑ 915 nm series: Electro‑optical conversion efficiency reaches 70% @ 40 A at 45 W output; efficiency remains 69.7% @ 49.5 A at 55 W output. ‑ 975 nm series: Electro‑optical conversion efficiency reaches 69.1% @ 43.5 A at 45 W output; efficiency hits 69.7% @ 52.5 A at 55 W output.

Meanwhile, the devices feature significantly reduced thermal resistance under high‑power conditions, enhanced facet‑damage resistance and guaranteed long‑term reliability. The developed 915 / 975 nm single‑emitter product portfolio covers 42 W, 45 W, 55 W and 66 W variants. These products are flexibly applicable to diverse scenarios such as high‑power fiber‑laser pumping, semiconductor laser systems and scientific‑research lasers, delivering core support for high‑end laser applications demanding high power, high efficiency and high reliability.

Figure 1 Typical L‑I‑V‑E curve of the 915 nm 55 W chip

Figure 2 Typical L‑I‑V‑E curve of the 975 nm 55 W chip

Product Portfolio

Single‑emitter products covering 42 W, 45 W, 55 W and 66 W for 915 nm / 975 nm wavelengths have been developed.