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Silicon Carbide (SiC) Submount

Silicon Carbide (SiC) Submount

Silicon carbide thermal sinking
Prefabricated gold and tin solder
The thermal conductivity of the monocrystalline SiC substrate ≥ 370W/m*K
CTE matching chip material
High voltage resistance 500V
Accept customized needs

Technical Specifications

Product Model Specification size Substrate thermal conductivity Gold and tin solder components Detailed Indicators
DG-SiC-370-TF-AuSn-4557-03 4.50*5.75*0.51 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-5070-14 5.00*7.00*0.51 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-5070-16 5.00*7.00*0.66 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-4048-22 4.05*4.80*0.51 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-4057-43 4.05*5.75*0.51 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-4057-46 4.05*5.75*0.66 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-3548-52 3.50*4.80*0.51 mm ≥370W/m*K Au:75±5wt%
DG-SiC-370-TF-AuSn-4545-63 4.50*4.50*0.51 mm ≥370W/m*K Au:75±5wt%
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