The latest advances in high-power 9xx-nm semiconductor laser tubes were presented at Photonics West in San Francisco

Abstract

DoGain presented the latest advancements in its high-power 9xx-nm semiconductor laser tube at Photonics West in San Francisco on January 29, 2023. With a maximum output power of 48.5 W and a power conversion efficiency of 72.6%, the latest laser diode tubes provide customers with a cost-effective solution for high-power laser systems.

Application and Background

Semiconductor laser diodes are widely used in various industrial applications as pump sources for fiber lasers and direct diode systems, and have become critical components in several industries due to their efficiency, reliability, and compact design. With the rapid development of lasers in the field of industrial processing, 9xx-nm high-power semiconductor lasers as pump sources for fiber lasers and solid-state lasers have become one of the hot spots in the industry.

Technical difficulties

1. Extensive temperature control system requirements;

2. Extremely high electro-optical conversion efficiency and good working stability, compact size and simple driving requirements;

3. The chip requires low loss, low voltage, high internal quantum efficiency and low divergence angle, but there are mutual constraints and contradictory design challenges between parameters.

4. Challenges in the growth of high-quality epitaxial materials with low defect density, low impurity density, and high repetition stability.

Research results

The R&D team has conducted in-depth research and achieved breakthrough results on the 915 nm pumped semiconductor laser tube, resulting in a solution that is ideal for a wide temperature range due to its wide absorption band. This eliminates the need for extensive temperature control systems, making laser diodes more attractive for use in high-power laser systems.

To improve the efficiency and output power of laser diodes, Dogain leveraged its expertise in epitaxial design and growth technologies to achieve significant improvements in output power and power conversion efficiency. With a maximum output power of 48.5 W and a power conversion efficiency of 72.6%, the latest laser diode tube provides customers with a cost-effective solution for high-power laser systems.

Dogain's unique asymmetric epitaxial structure is optimized for low optical loss and high internal efficiency, ensuring efficient and reliable semiconductor laser tubes. In addition, the transmitter width scaling at 55 A allows for an impressive 55 W output power.

Summary

Dogain offers die laser diodes, base chips, and fiber-coupled multi-emitter modules, as well as a broad portfolio of components, including high-power edge-emitting semiconductor laser tubes, single emitters and strips, and vertical cavity surface-emitting lasers. Dogain is bringing this innovative technology to market in response to market needs and providing customers with the high-power and high-efficiency solutions they need to drive their business forward.

High-power, high-efficiency, and high-brightness semiconductor lasers not only promote the development of fiber lasers, but also cater to the needs of industrial processing, which plays a driving role in the expansion of the overall application field of lasers and leads the market development of downstream products. This new laser semiconductor tube technology will have a significant impact on the industry and become the new standard for high-power laser laser beam solutions.