Major Upgrade | New-Generation 808nm High-Power Single-Emitter Laser Chips Achieve Dual Breakthroughs in Efficiency and Service Life

Through breakthroughs in multiple core technologies including epitaxial design, material growth and process fabrication, DoGain has successfully developed a new generation of 808nm series single-emitter semiconductor laser chips with greatly improved efficiency and reliability. It delivers more efficient and stable core light sources for solid-state laser pumping, laser lighting, biomedical treatment, scientific research and other application fields.

Application Background

The 808 nm semiconductor laser chip serves as a core light source for solid-state laser pumping, laser lighting, biomedicine, scientific research and other fields. Its electro-optical conversion efficiency and long-term reliability directly determine the energy consumption, operational stability and service life of laser systems. Therefore, achieving dual breakthroughs in efficiency and reliability can not only greatly improve the energy efficiency ratio and extend the service life of systems, but also meet the stringent demands for high performance and long-term stability in rigorous application scenarios, and drive technological upgrading and rapid development of relevant application sectors.

Development Achievements

Leveraging its core technology system with fully independent intellectual property rights, DoGain has carried out systematic technical research to break through the bottlenecks in efficiency and reliability of high-power 808nm semiconductor laser chips.

By innovating quantum well stress regulation, optimizing epitaxial structure design and epitaxial material growth quality, and refining key processes including low-damage wafer fabrication and cavity surface passivation treatment, the company has achieved coordinated improvement in electro-optical conversion efficiency and device reliability.

The electro-optical conversion efficiency has been raised from the mainstream industry level of 60% to 64%, setting a new performance benchmark. Meanwhile, its extrapolated continuous service life has achieved a major breakthrough exceeding 75,000 hours.

A complete lineup of 808nm single-emitter products rated at 6W, 10W, 15W and 22W has been developed, which can be flexibly adapted to diverse application scenarios such as industrial laser pumping, laser medical treatment and infrared lighting, providing crucial support for high-end laser applications that demand high efficiency and superior reliability.

Typical L-I-V-E Curves of 808nm 10W Laser Chip

Typical L-I-V-E Curves of 808nm 22W

Accelerated High-Temperature & High-Current Reliability Test Curve of 808nm Single Emitter (7000 Hours)

A New Generation of High-efficiency and High-reliability Product Series Developed